Out of standard performances

WHY USE SILICON PASSIVE IN YOUR DESIGN?

IPDiA PICS shows superior performance against alternative technologies

• At the component level
  • Complete design rules available
  • Custom design made possible
  • Against Frequency
  • Against Temperature
  • Against Operating Voltage
• At the system level
  • High integration capabilities
  • High predictability thanks to simulation models
  • High repeatability thanks to IC manufacturing Excellence

SILICON PASSIVES: BETTER PERFORMANCE WITH COMPLETE DESIGN RULES

• Comparison between typical design rules of LTCC, Laminate and Silicon passive (PICS) based circuits

Design Rules (all dimensions are given in µm)	LTCC	Laminate	PICS
Min. line width	50	65	3
Min. line space	50	65	5

• Increased routing density leads to higher performance

SILICON PASSIVES: BETTER PERFORMANCE FOR PLATFORM INTEGRATION

• Exact component value from simulation can be used, no compromises on performance
• Performance stability over temperature range, thanks to +/-30 ppm variation per °C (COG performances)
• Accurate matching value of 1 % accuracy

Design advantage	LTTC	Laminate	PICS
Simulation accuracy	Medium	Low	High
Temperature stability	Yes, with COG capacitor	Yes with COG capacitor	Yes, without cost penalty
1 % Component Matching	Yes, with cost penalties	Yes, with cost penalties	Yes, without cost penalty
High Routing density	No	Very low	Yes

SILICON PASSIVES: BETTER PERFORMANCE THAN SMDS

• Comparison between typical SMD inductor and Silicon Passives (PICS)

Design Rules	High frequency SMD inductor (0201)	PICS (Cu)
Value (nH)	8.2	8.2
Tolerance	5 %	1 %
Impact tolerance @ 5 GHz	High	Low
Q Min. @ 100 MHz	8	9
SRF (self resonant frequency)	3700	5600

• The material properties of the HRS outperform organic laminate and ceramic substrates. The extremely low loss tangent value allows devices to operate at very high frequency with very low attenuation
• PICS allows to design at frequencies up to 100 GHz

3D SILICON PASSIVE DEVICES OUT OF STANDARD PERFORMANCE

Capacitors Superior temperature stability (<20 ppm) Technology characterized to +200 °C Very low leakage current (<40 nA)
Superior DC voltage stability (<0.1 %/V) No capacitance change over voltage variation. Very low ESR < 40 mOhm
Zener Diodes Breakdown voltage up to 100 Volts and ESD Capability 15 kV Air discharge (IEC 6100-4-2, level 4) Resistors Excellent matching (better than 0.5 %) Coils Superior Q-factor (> 80) Self-res. freq. > 45GHz	3D SILICON PASSIVE TECHNOLOGY ALLOWS COMPLETE INTEGRATION OF: excellent RF filtering full RF-digital cross-talk cancellation excellent DC decoupling filtering

EXAMPLE: IMPROVING PERFORMANCE IN MIXED RF+ DIGITAL APPLICATIONS

• Dual TV tuner

- Thanks to the combination of high decoupling efficiency with optimal performance RF components, noise behavior is reduced considerably compared with designs with SMDs on laminate